IRFZ44N MOSFET

৳ 50.00

Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated

Description

Specifically designed for Automotive applications, this HEXFET® Power IRFZ44N MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed, and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Gate-to-Source Voltage ± 20 V
Avalanche Current 25 A
Power Dissipation 94 W
Repetitive Avalanche Energy 9.4 mJ
Peak Diode Recovery dv/dt 5.0 V/ns

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Shipping & Delivery

Delivery within 1-3 working days in Dhaka City and 3-5 working days anywhere in Bangladesh. Please place your order with time in hand. Be patient, stay tuned.