IRFZ44N MOSFET

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed, and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

• Gate-to-Source Voltage ± 20 V
• Avalanche Current 25 A
• Power Dissipation 94 W
• Repetitive Avalanche Energy 9.4 mJ
• Peak Diode Recovery dv/dt ƒ 5.0 V/ns