৳ 50.00

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  • Advanced Process Technology
  • Ultra Low On-Resistance
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • Fully Avalanche Rated
SKU: 915271 Category: Tag:

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed, and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

  • Gate-to-Source Voltage ± 20 V
  • Avalanche Current 25 A
  • Power Dissipation 94 W
  • Repetitive Avalanche Energy 9.4 mJ
  • Peak Diode Recovery dv/dt ƒ 5.0 V/ns
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